SI3900DV-T1-E3

SI3900DV-T1-E3, n-channel (D-S) MOSFET, 20 V, 1.4 A, 0.83 W, TSOP

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Price:: US $0.22~0.29 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 2 :	0.29 / Piece
2 ~ 3000 :	0.22 / Piece

PartNumber:: SI3900DV-T1-E3

Brand:: Vishay Siliconix - Vishay | D/C: 07+

Availability:: Supply Ability: 1/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-14

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Part Number:SI3900DV-T1-E3
US $0.22 - 0.29
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Product Summary

The SI3900DV-T1-E3 is a dual n-channel 20-V (D-S) MOSFET.

Parametrics

STW12NK80Z absolute maximum ratings: (1)Drain-source voltage VDS: 20 V; (2)Gate-source voltage VGS: ±12 V; (3)Continuous drain current (TJ = 150 ℃)TA = 25 ℃ : 2.0 A; TA = 85 ℃ ID: 1.4 A; (4)Pulsed drain current (10 μs pulse width)IDM: 8 A; (5)Continuous source current (diode conduction)IS: 0.75 A; (6)Maximum power dissipationa TA = 25 ℃ PD: 0.83 W; TA = 85 ℃: 0.53 W; (7)Operating junction and storage temperature range TJ, Tstg: −55 to 150 ℃.