Product Summary
The SI3900DV-T1-E3 is a dual n-channel 20-V (D-S) MOSFET.
Parametrics
STW12NK80Z absolute maximum ratings: (1)Drain-source voltage VDS: 20 V; (2)Gate-source voltage VGS: ±12 V; (3)Continuous drain current (TJ = 150 ℃)TA = 25 ℃ : 2.0 A; TA = 85 ℃ ID: 1.4 A; (4)Pulsed drain current (10 μs pulse width)IDM: 8 A; (5)Continuous source current (diode conduction)IS: 0.75 A; (6)Maximum power dissipationa TA = 25 ℃ PD: 0.83 W; TA = 85 ℃: 0.53 W; (7)Operating junction and storage temperature range TJ, Tstg: −55 to 150 ℃.
Features
SI3900DV-T1-E3 feature: TrenchFET power MOSFET.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() SI3900DV-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 2.4A |
![]() Data Sheet |
![]()
|
|
||||||||||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() Si3900DV |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() SI3900DV-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 2.4A |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() SI3900DV-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 2.4A |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() SI3900DV-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() Si3905DV |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() SI3905DV-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 8V 2.5A |
![]() Data Sheet |
![]() Negotiable |
|