Product Summary

The SI3900DV-T1-E3 is a dual n-channel 20-V (D-S) MOSFET.

Parametrics

STW12NK80Z absolute maximum ratings: (1)Drain-source voltage VDS: 20 V; (2)Gate-source voltage VGS: ±12 V; (3)Continuous drain current (TJ = 150 ℃)TA = 25 ℃ : 2.0 A; TA = 85 ℃ ID: 1.4 A; (4)Pulsed drain current (10 μs pulse width)IDM: 8 A; (5)Continuous source current (diode conduction)IS: 0.75 A; (6)Maximum power dissipationa TA = 25 ℃ PD: 0.83 W; TA = 85 ℃: 0.53 W; (7)Operating junction and storage temperature range TJ, Tstg: −55 to 150 ℃.

Features

SI3900DV-T1-E3 feature: TrenchFET power MOSFET.

Diagrams

SI3900DV-T1-E3 pin connection 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI3900DV-T1-E3
SI3900DV-T1-E3
Vishay/Siliconix
MOSFET 20V 2.4A
Data Sheet
0-1: $0.47
1-10: $0.33
10-100: $0.28
100-250: $0.25
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
Si3900DV
Si3900DV
Other

Data Sheet
Negotiable 
SI3900DV-T1-E3
SI3900DV-T1-E3
Vishay/Siliconix
MOSFET 20V 2.4A
Data Sheet
0-1: $0.47
1-10: $0.33
10-100: $0.28
100-250: $0.25
SI3900DV-T1-GE3
SI3900DV-T1-GE3
Vishay/Siliconix
MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V
Data Sheet
0-1850: $0.28
1850-3000: $0.23
3000-6000: $0.22
6000-12000: $0.22
Si3905DV
Si3905DV
Other

Data Sheet
Negotiable 
SI3905DV-T1
SI3905DV-T1
Vishay/Siliconix
MOSFET 8V 2.5A
Data Sheet
Negotiable 
Si3909DV
Si3909DV
Other

Data Sheet
Negotiable