(Hong Kong)
Product Summary
The blf7g22ls-130 is a LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. The blf7g22ls-130 is ideal for RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range.
Parametrics
blf7g22ls-130 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: -0.5 +13 V; (3)Tstg storage temperature: 65 +150 °C; (4)Tj junction temperature: 200 °C; (5)gfs forward transconductance VDS = 10 V; ID = 7.5 A: 10 to 11 S; (6)PL(AV)average output power: 30 W.
Features
blf7g22ls-130 features: (1)Excellent ruggedness; (2)High efficiency; (3)Low Rth providing excellent thermal stability; (4)Designed for broadband operation (2000 MHz to 2200 MHz); (5)Lower output capacitance for improved performance in Doherty applications; (6)Designed for low memory effects providing excellent digital pre-distortion capability; (7)Internally matched for ease of use; (8)Integrated ESD protection; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLF7G22LS-130,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TransMOSFET N-CH 65V |
Data Sheet |
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BLF7G22LS-130,118 |
NXP Semiconductors |
Transistors RF MOSFET Power TransMOSFET N-CH 65V |
Data Sheet |
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