(Hong Kong)
Product Summary
The ixfn150n10 a power MOSFET. Applications are (1)DC-DC converters; (2)Synchronous rectification; (3)Battery chargers; (4)Switched-mode and resonant-mode power supplies; (5)DC choppers; (6)Temperature and lighting controls; (7)Low voltage relays.
Parametrics
ixfn150n10 absolute maximum ratings: (1)VDSS TJ = 25°C to 150°C: 150 V; (2)VDGR TJ = 25°C to 150°C, RGS = 1MΩ: 150 V; (3)VGS Continuous: 20 V; (4)VGSM Transient: 30 V; (5)ID25 TC = 25°C: 150 A; (6)IL(RMS)Terminal (current limit): 100 A; (7)IDM TC = 25°C; : 600 A; (8)IAR TC = 25°C: 150 A; (9)EAR TC = 25°C: 60 mJ; (10)EAS TC = 25°C: 3 J; (11)PD TC = 25°C: 600 W; (12)TJ: -55 to +150°C; (13)TJM: 150°C; (14)Tstg: -55 to +150°C; (15)TL 1.6 mm (0.063 in)from case for 10 s: 300°C.
Features
ixfn150n10 features: (1)International standard package; (2)Encapsulating epoxy meets UL94V-0, flammability classification; (3)miniBLOC with Aluminium nitride isolation; (4)Low RDS (on)HDMOSTM process; (5)Rugged polysilicon gate cell structure; (6)Unclamped Inductive Switching (UIS)rated; (7)Low package inductance; (8)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IXFN150N10 |
Ixys |
MOSFET 150 Amps 100V |
Data Sheet |
Negotiable |
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Quantity | ||||
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