(Hong Kong)
Product Summary
The ixfn61n50 is a high current power MOSFET. Applications are (1)DC choppers; (2)AC motor speed controls; (3)DC servo and robot drives; (4)Uninterruptible power supplies (UPS); (5)Switched mode and resonant mode power supplies.
Parametrics
ixfn61n50 absolute maximum ratings: (1)VDSS TJ = 25°C to 150°C: 500 V; (2)VDGR TJ = 25°C to 150°C; RGS = 1.0 MW: 500 V; (3)VGS Continuous: ±20 V; (4)VGSM Transient: ±30 V; (5)ID25 TC = 25°C IXFN: 61 A; (6)IDM TC = 25°C (1)IXFN: 244 A; (7)PD TC = 25°C: 625 W; (8)TJ: -40 to +150 °C; (9)TJM: 150 °C; (10)Tstg: -40 to +150 °C.
Features
ixfn61n50 features: (1)International standard package; (2)Isolation voltage 3000V (RMS); (3)Low RDS (on)HDMOSTM processl; (4)Rugged polysilicon gate cell structure; (5)Low drain-to-case capacitance (<60 pF): reduced RFI; (6)Low package inductance (< 10 nH): easy to drive and to protect; (7)Aluminium Nitride Isolation: increased current ratings.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IXFN61N50 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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