MIG50J7CSB1W

Silicon N Channel IGBT, mig50j7csb1w, 450V, 50A, 340W

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Price:: US $9.02~30.65 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	30.65 / Piece
101 ~ 1000 :	18.03 / Piece
1001 ~ 2000 :	9.02 / Piece

PartNumber:: MIG50J7CSB1W

Brand:: Toshiba Semiconductor - Toshiba | D/C: 04+

Availability:: Supply Ability: 2079/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-26

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Part Number:MIG50J7CSB1W
US $9.02 - 30.65
Quantity:

piece

Product Summary

The mig50j7csb1w is a Silicon N Channel IGBT.

Parametrics

mig50j7csb1w absolute maximum ratings: (1)Supply voltage P-N power terminal VCC 450 V; (2)Collector-emitter voltage ― VCES 600 V; (3)Collector current Tc = 25°C, DC IC 50 A; (4)Forward current Tc = 25°C, DC IF: 50 A; (5)Collector power dissipation Tc = 25°C PC: 340 W; (6)Junction temperature Tj: 150 °C; (7)Control supply voltage VD-GND terminal VD: 20 V; (8)Input voltage IN-GND terminal VIN 20 V; (9)Fault output voltage FO-GND (L)terminal VFO: 20 V; (10)Fault output current fo sink current ifo: 10 mA; (11)operating temperature tc: -20~+100 °C; (12)storage temperature range tstg:-40~+125 °C; (13)isolation voltage ac 1 minute, viso: 2500 V; (14)screw torque m6: 3 n·m.

Features

mig50j7csb1w features: (1)Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over temperature)into a single package; (2)The electrodes are isolated from the case; (3)Low thermal resistance; (4)VCE (sat)= 1.8 V (typ.); (5)UL recognized: File No.E87989; (6)Weight: 278 g (typ.).