(Hong Kong)
Product Summary
The STD60NF55L-1 is a MOSFET. It is the latest development of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Application is switching application.
Parametrics
STD60NF55L-1 absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 55 V; (2)Gate- source voltage: ± 15 V; (3)Drain current (continuous)at TC = 25°C: 60 A; (4)Drain current (continuous)at TC = 100°C: 42 A; (5)Drain current (pulsed): 240 A; (6)Total dissipation at TC = 25°C: 110 W; (7)Derating Factor: 0.73 W/°C; (8)Peak diode recovery voltage slope: 16 V/ns; (9)Single pulse avalanche energy: 400 mJ; (10)Storage temperature: -55 to 175 °C; (11)Max. operating junction temperature: -55 to 175 °C.
Features
STD60NF55L-1 feature is low threshold drive.
Diagrams
