(Hong Kong)
Product Summary
The mrf21180 is a 28V RF Power Field Effect Transistor. It is designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. The mrf21180 is used in Class AB for PCN-PCS/cellular radio and WLL applications.
Parametrics
mrf21180 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25°C: 380W, Derate above 25°C: 2.17W/°C; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Case Operating Temperature TC 150 °C; (6)Operating Junction Temperature TJ 200 °C.
Features
mrf21180 features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency, and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)RoHS Compliant; (8)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Diagrams
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Pricing (USD) |
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 MRF21180 |
Other |
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Data Sheet |
Negotiable |
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MRF21180R6 |
Other |
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Data Sheet |
Negotiable |
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