(Hong Kong)
Product Summary
The mrf338 is a RF power transistor. The mrf338 is designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range.
Parametrics
mrf338 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 30 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 4 Vdc; (4)Collector Current - Continuous: 9A; (5)Collector Current - Peak: 12A; (6)Total Device Dissipation @ TC = 25°C PD: 250Watts; (7)Storage Temperature Range Tstg: -65 to +150°C.
Features
mrf338 features: (1)Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts, Minimum Gain = 7.3 dB, Efficiency = 50% (Min); (2)Built–In Matching Network for Broadband Operation; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability Applications.
Diagrams
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 MRF338 |
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