Product Summary

The mrf557 is a microwave discrete low power transistor.



Parametrics

mrf557 absolute maximum ratings: (1)VCEO Collector-Emitter Voltage: 16 Vdc; (2)VCBO Collector-Base Voltage: 30 Vdc; (3)VEBO Emitter-Base Voltage: 3.0 Vdc; (4)IC Collector Current: 500 mA.

Features

mrf557 features: (1)Specified @ 12.5 V, 870 MHz Characteristics; (2)Output Power = 1.5 W; (3)Minimum Gain = 8 dB; (4)Efficiency 60% (Typ); (5)Cost Effective PowerMacro Package; (6)Electroless Tin Plated Leads for Improved Solderability.

Diagrams

mrf557 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF557
MRF557
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $2.25
1-10: $1.88
10-25: $1.69
25-50: $1.50
MRF557T
MRF557T
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $2.25
1-10: $1.88
10-25: $1.69
25-50: $1.50