Product Summary

The tim6472-4 is a microwave power GAAS FET.

Parametrics

tim6472-4 absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3)Drain Current IDS: 3.5A; (4)Total Power Dissipation (Tc= 25 °C)PT: 23.1W; (5)Channel Temperature Tch: 175°C; (6)Storage Temperature Tstg: -65 to +175°C.

Features

tim6472-4 features: (1)Low intermodulation distortion- IM3= -45 dBc at Po = 25.5 dBm, Single carrier level; (2)High power- P1dB = 36.5 dBm at 6.4ghz to 7.2ghz; (3)High gain- G1dB = 8.0dB at 6.4ghz to 7.2ghz; (4)Broad band internally matched; (5)Hermetically sealed package.

Diagrams

tim6472-4 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TIM6472-45SL
TIM6472-45SL

Other


Data Sheet

Negotiable 
TIM6472-4SL
TIM6472-4SL

Other


Data Sheet

Negotiable 
TIM6472-4UL
TIM6472-4UL

Other


Data Sheet

Negotiable