Product Summary

The 58V257AT12 is an electrically erasable and programmable ROM organized as 32768-word × 8-bit. The 58V257AT12 has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. The 58V257AT12 also has a 64-byte page programming function to make their write operations faster.

Parametrics

58V257AT12 absolute maximum ratings: (1)Supply voltage relative to VSS, VCC: –0.6 to +7.0 V; (2)Input voltage relative to VSS, Vin: –0.5 to +7.0V; (3)Operating temperature range, Topr: 0 to +70℃; (4)Storage temperature range, Tstg: –55 to +125℃.

Features

58V257AT12 features: (1)Single 3 V supply: 2.7 to 5.5 V; (2)Access time: 120 ns max; (3)Power dissipation: Active: 20 mW/MHz, (typ); Standby: 110 uW (max); (4)On-chip latches: address, data, CE, OE, WE; (5)Automatic byte write: 10 ms max; (6)Automatic page write (64 bytes): 10 ms max; (7)Ready/Busy (only the HN58V257A series); (8)Data polling and Toggle bit; (9)Data protection circuit on power on/off; (10)Conforms to JEDEC byte-wide standard; (11)Reliable CMOS with MNOS cell technology; (12)105 erase/write cycles (in page mode); (13)10 years data retention; (14)Software data protection; (15)Write protection by RES pin (only the HN58V257A series); (16)Industrial versions (Temperature range: – 20 to 85℃ and – 40 to 85℃) are also available.

Diagrams

58V257AT12 block diagram