(Hong Kong)
Product Summary
The BCP54-16 is a NPN Silicon AF Transistor.
Parametrics
BCP54-16 absolute maximum ratings: (1)ollector-emitter voltage,VCEO: 45V; (2)Collector-emitter voltage, VCER: 45V; (3)Collector-base voltage, VCBO 45V; (4)Emitter-base voltage, VEBO: 5V; (5)Collector current, IC: 1 A; (6)Peak collector current, tp ≤ 10 ms, ICM: 1.5A; (7)Base current, IB: 100 mA; (8)Peak base current, IBM: 200A; (9)Total power dissipation, TS ≤ 120℃, Ptot: 2 W; (10)Junction temperature, Tj: 150℃; (11)Storage temperature, Tstg: -65 to 150℃.
Features
BCP54-16 features: (1)For AF driver and output stages; (2)High collector current; (3)Low collector-emitter saturation voltage; (4)Pb-free (RoHS compliant) package; (5)Qualified according AEC Q101.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BCP54-16 |
Other |
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Data Sheet |
Negotiable |
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BCP54-16 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
Negotiable |
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BCP54-16,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
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BCP54-16,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
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BCP54-16 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
Negotiable |
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