Product Summary
The RJK0328DPB-01-J0 is a silicon N channel power MOS FET power switch.
Parametrics
RJK0328DPB-01-J0 absolute maximum ratings: (1)Drain to source voltage VDSS: 30 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 60 A; (4)Drain peak current ID(pulse): 240 A; (5)Body-drain diode reverse drain current IDR: 60 A; (6)Avalanche current IAP: 30 A; (7)Avalanche energy EAR: 90 mJ; (8)Channel dissipation Pch: 65 W; (9)Channel to Case Thermal Resistance θch-C: 1.93 ℃/W; (10)Channel temperature Tch: 150 ℃; (11)Storage temperature Tstg: –55 to +150 ℃.
Features
RJK0328DPB-01-J0 features: (1)High speed switching; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance; (6)RDS(on) = 1.6 mtyp. (at VGS = 10 V); (7)Pb-free.
Diagrams

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![]() RJK0396DPA-00#J53 |
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![]() MOSFET N-CH 30V 30A W-PAK |
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![]() RJK0397DPA-00#J53 |
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![]() MOSFET N-CH 30V 30A W-PAK |
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![]() RJK03B7DPA-00#J53 |
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![]() MOSFET N-CH 30V 30A W-PAK |
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![]() RJK03B9DPA-00#J5A |
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![]() MOSFET N-CH 30V 30A 2WPACK |
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![]() RJK03C0DPA-00#J53 |
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![]() MOSFET N-CH 30V 70A W-PAK |
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![]() RJK0652DPB-00#J5 |
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![]() MOSFET N-CH 60V 35A LFPAK |
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(Hong Kong)










