Product Summary
The RJK0328DPB-01-J0 is a silicon N channel power MOS FET power switch.
Parametrics
RJK0328DPB-01-J0 absolute maximum ratings: (1)Drain to source voltage VDSS: 30 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 60 A; (4)Drain peak current ID(pulse): 240 A; (5)Body-drain diode reverse drain current IDR: 60 A; (6)Avalanche current IAP: 30 A; (7)Avalanche energy EAR: 90 mJ; (8)Channel dissipation Pch: 65 W; (9)Channel to Case Thermal Resistance θch-C: 1.93 ℃/W; (10)Channel temperature Tch: 150 ℃; (11)Storage temperature Tstg: –55 to +150 ℃.
Features
RJK0328DPB-01-J0 features: (1)High speed switching; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance; (6)RDS(on) = 1.6 mtyp. (at VGS = 10 V); (7)Pb-free.
Diagrams
RJK005N03T146 |
ROHM Semiconductor |
MOSFET N-CH 30V 500MA |
Data Sheet |
|
|
|||||||||||||||||||
RJK0204DPA-00#J53 |
MOSFET N-CH 30V W-PAK |
Data Sheet |
|
|
||||||||||||||||||||
RJK0225DNS-00#J5 |
MOSFET N-CH 25V 30A 8-HVSON |
Data Sheet |
|
|
||||||||||||||||||||
RJK0226DNS-00#J5 |
MOSFET N-CH 25V 40A 8-HVSON |
Data Sheet |
|
|
||||||||||||||||||||
RJK0230DPA-00#J5A |
MOSFET DL N-CH 25V 20A WPAK |
Data Sheet |
|
|
||||||||||||||||||||
RJK0301DPB-00#J0 |
MOSFET N-CH 30V 60A 5-LFPAK |
Data Sheet |
|
|