Product Summary

The BTS4140N is a N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in smart SIPMOS technology.

Parametrics

BTS4140N absolute maximum ratings: (1)supply voltage, Vbb: 60V; (2)load current(short-circuit current), Il: self limited A; (3)maximum current through the input pin (DC), Iin: ±15mA; (4)Operating temperature, Tj: -40 to +150℃; (5)Storage temperature, Tstg: -55 to +150℃.

Features

BTS4140N features: (1)current controlled input; (2)short circuit protection; (3)current limitation; (4)overload protection; (5)overvoltage protection(including load dump); (6)switching inductive loads; (7)clamp of negative voltage at input with inductive loads; (8)thermal shutdown with restart; (9)ESD-protection; (10)loss of GND and loss of Vbb protection; (11)very low standby current; (12)reverse battery protection.

Diagrams

BTS4140N block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BTS4140N
BTS4140N

Infineon Technologies

Power Switch ICs - POE / LAN Smart High Side MINI-PROFET

Data Sheet

0-1: $0.87
1-10: $0.77
10-100: $0.62
100-500: $0.48
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BTS4140N
BTS4140N

Infineon Technologies

Power Switch ICs - POE / LAN Smart High Side MINI-PROFET

Data Sheet

0-1: $0.87
1-10: $0.77
10-100: $0.62
100-500: $0.48
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