Product Summary
The BTS4140N is a N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in smart SIPMOS technology.
Parametrics
BTS4140N absolute maximum ratings: (1)supply voltage, Vbb: 60V; (2)load current(short-circuit current), Il: self limited A; (3)maximum current through the input pin (DC), Iin: ±15mA; (4)Operating temperature, Tj: -40 to +150℃; (5)Storage temperature, Tstg: -55 to +150℃.
Features
BTS4140N features: (1)current controlled input; (2)short circuit protection; (3)current limitation; (4)overload protection; (5)overvoltage protection(including load dump); (6)switching inductive loads; (7)clamp of negative voltage at input with inductive loads; (8)thermal shutdown with restart; (9)ESD-protection; (10)loss of GND and loss of Vbb protection; (11)very low standby current; (12)reverse battery protection.
Diagrams
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![]() BTS4140N |
![]() Infineon Technologies |
![]() Power Switch ICs - POE / LAN Smart High Side MINI-PROFET |
![]() Data Sheet |
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![]() BTS409L1 |
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![]() SWITCH SMART HIGH SIDE TO-220 |
![]() Data Sheet |
![]() Negotiable |
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![]() BTS409L1 E3043 |
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![]() IC HIGH SIDE PWR SWITCH TO220-5 |
![]() Data Sheet |
![]() Negotiable |
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![]() BTS409L1 E3062A |
![]() Infineon Technologies |
![]() Power Switch ICs - Power Distribution PROFET SMART HI SIDE PWR SW |
![]() Data Sheet |
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![]() BTS409L1-E3062A |
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![]() SMART HIGHSIDE SWITCH TO-220AB/5 |
![]() Data Sheet |
![]() Negotiable |
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![]() BTS410D2 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BTS410E2 |
![]() Infineon Technologies |
![]() Power Switch ICs - Power Distribution PROFET SMART HI SIDE PWR SW |
![]() Data Sheet |
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