Product Summary
The BUV21G is an NPN Silicon Power Transistor. This device is designed for high speed, high current, high power applications.
Parametrics
BUV21G absolute maximum ratings: (1)Collector-Emitter Voltage VCEO(SUS): 200 Vdc; (2)Collector-Base Voltage VCBO: 250 Vdc; (3)Emitter-Base Voltage VEBO: 7 Vdc; (4)Collector-Emitter Voltage (VBE = -1.5 V) VCEX: 250 Vdc; (5)Collector-Emitter Voltage (RBE = 100Ω) VCER: 240 Vdc; (6)Base-Current Continuous IB: 8 Adc; (7)Total Device Dissipation @ TC = 25℃ PD: 250 W; (8)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to 200℃.
Features
BUV21G features: (1)High DC Current Gain: hFE min = 20 at IC = 12 A; (2)Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A; (3)Very Fast Switching Times: TF max = 0.4 s at IC = 25 A.
Diagrams
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![]() BUV21G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 40A 200V 250W NPN |
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![]() BUV20 |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN High Current |
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![]() BUV21 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 40A 200V 250W NPN |
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![]() Negotiable |
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![]() BUV21G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 40A 200V 250W NPN |
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![]() BUV22 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 40A 250V 250W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() BUV22G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 40A 250V 250W NPN |
![]() Data Sheet |
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![]() BUV23 |
![]() Other |
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![]() Negotiable |
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