(Hong Kong)
Product Summary
The BUV21G is an NPN Silicon Power Transistor. This device is designed for high speed, high current, high power applications.
Parametrics
BUV21G absolute maximum ratings: (1)Collector-Emitter Voltage VCEO(SUS): 200 Vdc; (2)Collector-Base Voltage VCBO: 250 Vdc; (3)Emitter-Base Voltage VEBO: 7 Vdc; (4)Collector-Emitter Voltage (VBE = -1.5 V) VCEX: 250 Vdc; (5)Collector-Emitter Voltage (RBE = 100Ω) VCER: 240 Vdc; (6)Base-Current Continuous IB: 8 Adc; (7)Total Device Dissipation @ TC = 25℃ PD: 250 W; (8)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to 200℃.
Features
BUV21G features: (1)High DC Current Gain: hFE min = 20 at IC = 12 A; (2)Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A; (3)Very Fast Switching Times: TF max = 0.4 s at IC = 25 A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BUV21G |
ON Semiconductor |
Transistors Bipolar (BJT) 40A 200V 250W NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BUV21 |
ON Semiconductor |
Transistors Bipolar (BJT) 40A 200V 250W NPN |
Data Sheet |
Negotiable |
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BUV21G |
ON Semiconductor |
Transistors Bipolar (BJT) 40A 200V 250W NPN |
Data Sheet |
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BUV22G |
ON Semiconductor |
Transistors Bipolar (BJT) 40A 250V 250W NPN |
Data Sheet |
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BUV23 |
Other |
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Data Sheet |
Negotiable |
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BUV27G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 120V 70W NPN |
Data Sheet |
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BUV298V |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Power Module |
Data Sheet |
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