Product Summary
The DTB123ES is a Digital transistor.
Parametrics
DTB123ES absolute maximum ratings: (1)Supply voltage, VCC: -50V; (2)Input voltage, VIN: -12V; 10V; (3)Output current, IC: -500mA; (4)Power dissipation, Pd: 200mW; (5)Junction temperature, Tj: 150℃; (6)Storage temperature, Tstg: -55 to 150℃.
Features
DTB123ES features: (1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit); (2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects; (3)Only the on / off conditions need to be set for operation, making device design easy.
Diagrams

| Image | Part No | Mfg | Description | ![]() |
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![]() DTB123ESTP |
![]() ROHM Semiconductor |
![]() Transistors Switching (Resistor Biased) PNP 50V 500MA |
![]() Data Sheet |
![]() Negotiable |
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| Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() DTB143EKT146 |
![]() ROHM Semiconductor |
![]() Transistors Switching (Resistor Biased) PNP 50V 500MA |
![]() Data Sheet |
![]()
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![]() |
![]() DTB123EKT146 |
![]() ROHM Semiconductor |
![]() Transistors Switching (Resistor Biased) PNP 50V 500MA |
![]() Data Sheet |
![]()
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![]() |
![]() DTB123ESTP |
![]() ROHM Semiconductor |
![]() Transistors Switching (Resistor Biased) PNP 50V 500MA |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() DTB143EC |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() DTB143EK |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() DTB133HS |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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(Hong Kong)











