Product Summary

The FLM1011-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Parametrics

FLM1011-8F absolute maximum ratings: (1)Drain-Source Voltage:-15V; (2)Gate-Source Voltage:-5V; (3)Total Power Dissipation:42.8W; (4)Storage Temperature:-65℃ to +175℃; (5)Channel Temperature:175℃.

Features

FLM1011-8F features: (1) High Output Power: P1dB = 39.0dBm (Typ.); (2) High Gain: G1dB = 7.0dB (Typ.); (3) High PAE: ηadd = 29% (Typ.); (4) Low IM3 = -46dBc@Po = 28.5dBm; (5) Broad Band: 10.7GHz to 11.7GHz; (6) Impedance Matched Zin/Zout = 50Ω; (7) Hermetically Sealed.

Diagrams

FLM1011-8F dimension

FLM1213-4F
FLM1213-4F
Other

Data Sheet
Negotiable