Product Summary

The IRF7754TRPBF is a HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter-national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.

Parametrics

IRF7754TRPBF absolute maximum ratings: (1)VDS Drain-Source Voltage: -12 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -5.5; (3)ID @ TA = 70℃ Continuous Drain Current, VGS @ -4.5V: -4.4 A; (4)IDM Pulsed Drain Current: -22A; (5)PD @TA = 25℃ Maximum Power Dissipation: 1W; (6)PD @TA = 70℃ Maximum Power Dissipation: 0.64 W; (7)Linear Derating Factor: 0.01 W/℃; (8)VGS, Gate-to-Source Voltage: ±8 V; (9)TJ , TSTG Junction and Storage Temperature Range: -55 to +150℃.

Features

IRF7754TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Very Small SOIC Package; (4)Low Profile (< 1.2mm); (5)Available in Tape & Reel.

Diagrams

IRF7754TRPBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7754TRPBF
IRF7754TRPBF
International Rectifier
MOSFET MOSFT DUAL PCh -12V 5.5A
Data Sheet
0-1: $1.26
1-25: $0.82
25-100: $0.59
100-250: $0.56
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710
IRF710
Vishay/Siliconix
MOSFET N-Chan 400V 2.0 Amp
Data Sheet
0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710
Other

Data Sheet
Negotiable 
IRF710_R4943
IRF710_R4943
Fairchild Semiconductor
MOSFET TO-220AB
Data Sheet
Negotiable 
IRF7101
IRF7101
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-570: $0.45
IRF7101PBF
IRF7101PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-4000: $0.41