BLF6G10LS-200R

BLF6G10LS-200R, Power LDMOS transistor, 1000 MHz, 65 V, 39 A, NXP

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Price:: US $22.95~78.03 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	78.03 / Piece
101 ~ 1000 :	45.90 / Piece
1001 ~ 2000 :	22.95 / Piece

PartNumber:: BLF6G10LS-200R

Brand:: NXP Semiconductors - nxp | Pack: | D/C: 06+

Availability:: Supply Ability: 2000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-25

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Part Number:BLF6G10LS-200R
US $22.95 - 78.03
Quantity:

piece

Product Summary

The blf6g10ls-200r is a Power LDMOS transistor. The 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Application is RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range.

Parametrics

blf6g10ls-200r absolute maximum ratings: (1)Drain-source voltage: 65 V; (2)Gate-source voltage: -0.5 +13 V; (3)Drain current: 39 A; (4)Storage temperature: -65 to +150 °C; (5)Junction temperature: 225 °C.

Features

blf6g10ls-200r features: (1)Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: Average output power = 32 W; Power gain = 22.5 dB; Efficiency = 27 %; ACPR = -41 dBc; (2)Easy power control; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (700 MHz to 1000 MHz); (8)Internally matched for ease of use; (9)Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS).