(Hong Kong)
Product Summary
The blf6g21-10g is a 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Applications include RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multi carrier applications in the HF to 2200 MHz frequency range, and Broadcast drivers.
Parametrics
blf6g21-10g absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: -0.5 to +13 V; (3)Tstg storage temperature: -65 to +150℃; (4)Tj junction temperature: 225℃; (5)Rth(j-case) thermal resistance from junction to case Tcase = 80℃; PL(AV) = 11W: 3.2 K/W.
Features
blf6g21-10g features: (1)Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: Average output power = 0.7 W, Gain = 18.5 dB, Efficiency = 15 %, ACPR = -50 dBc; (2)Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: Average output power = 2 W, Gain = 19.3 dB, Efficiency = 31 %, ACPR = -39 dBc; (3)Easy power control; (4)Integrated ESD protection; (5)Excellent ruggedness; (6)High efficiency; (7)Excellent thermal stability; (8)No internal matching for broadband operation; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLF6G21-10G,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR PWR LDMOS |
Data Sheet |
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BLF6G21-10G,135 |
NXP Semiconductors |
Transistors RF MOSFET Power TransMOSFET N-CH 65V |
Data Sheet |
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