Product Summary

The blf7g27l-75p is a 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. The application of it is RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2300 MHz to 2700 MHz frequency range.

Parametrics

blf7g27l-75p absolute maximum ratings: (1)drain-source voltage: - 65 V; (2)gate-source voltage: -0.5 to +13 V; (3)drain current: - 18 A; (4)storage temperature: -65 to +150°C; (5)junction temperature: - 225°C.

Features

blf7g27l-75p features: (1)Excellent ruggedness; (2)High efficiency; (3)Low Rth providing excellent thermal stability; (4)Designed for broadband operation (2300 MHz to 2700 MHz); (5)Lower output capacitance for improved performance in Doherty applications; (6)Designed for low memory effects providing excellent pre-distortability; (7)Internally matched for ease of use; (8)Integrated ESD protection; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

Diagrams

blf7g27l-75p pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF7G27L-75P,112
BLF7G27L-75P,112
NXP Semiconductors
Transistors RF MOSFET Power Single 65V 18A 0.29Ohms
Data Sheet
0-41: $46.51
41-100: $42.68
BLF7G27L-75P,118
BLF7G27L-75P,118
NXP Semiconductors
Transistors RF MOSFET Power Single 65V 18A 0.29Ohms
Data Sheet
0-68: $46.51
68-100: $42.68