Product Summary

The FLL21E010MK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. The FLL21E010MK is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.

Parametrics

FLL21E010MK absolute maximum ratings: (1)Drain-Source Voltage: 32 V; (2)Gate-Source Voltage: -3 V; (3)Total Power Dissipation: 41.5 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 200 °C.

Features

FLL21E010MK features: (1)High Voltage Operation : VDS=28V; (2)High Power : P1dB=40dBm(typ.)at f=2.17GHz; (3)High Gain: G1dB=14dB(typ.)at f=2.17GHz; (4)Broad Frequency Range : 2100 to 2200MHz; (5)Proven Reliability.

Diagrams

FLL21E010MK pin connection