(Hong Kong)
Product Summary
The FLL21E045IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. The FLL21E045IY is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
Parametrics
FLL21E045IY absolute maximum ratings: (1)Drain-Source Voltage: 32 V; (2)Gate-Source Voltage: -3 V; (3)Total Power Dissipation: 92 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 200 °C.
Features
FLL21E045IY features: (1)High Voltage Operation (VDS=28V)GaAs FET; (2)High Gain: 15.5dB(typ.)at Pout=40dBm(Avg.); (3)Broad Frequency Range : 2110 to 2170MHz; (4)High Reliability.
Diagrams
