(Hong Kong)
Product Summary
The FLM3439-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Parametrics
FLM3439-25F absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate -Source Voltage: -5 V; (3)Total Powe r Dissipation: 93.7 W; (4)Storage Temperature: -65 to +150 ℃; (5)Channel Tempe rature: 175 ℃.
Features
FLM3439-25F features: (1)High Output Power: P1dB=44.5dBm(Typ.); (2)High Gain: G1dB=10.5dB(Typ.); (3)High PAE: ηadd=41%(Typ.); (4)Broad Band: 3.4~3.9GHz; (5)Impedance Matched Zin/Zout = 50Ω; (6)Hermetically Sealed Package;(7)Low IM3 = -46dBc@Po = 33.5dBm (Typ.).
Diagrams
