Product Summary

The mrf21090s is a RF Power Field Effect Transistor designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. The mrf21090s is suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

Parametrics

mrf21090s absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation, PD: 83.3 W/℃; (4)Storage Temperature Range Tstg: - 65 to +150℃; (5)Operating Junction Temperature TJ: 200℃.

Features

mrf21090s features: (1)Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts Output Power ó 3.5 Watts Power Gain 14 dB Efficiency ó 15%; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large-Signal Impedance Parameters; (8)Low Gold Plating Thickness on Leads, 40μ" Nominal; (9)In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

Diagrams

mrf21090s test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF21090S
MRF21090S
Other

Data Sheet
Negotiable 
MRF21090SR3
MRF21090SR3
Other

Data Sheet
Negotiable