(Hong Kong)
Product Summary
The mrf238 is a silicon npn rf power transistor. The MRF238 is designed for large signal power amplifier applications operating to 175 MHz.
Parametrics
mrf238 absolute maximum ratings: (1)IC: 5.0 A; (2)VCB: 60 V; (3)VCE: 18 V; (4)PDISS: 65 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +200 ℃.
Features
MRFmrf238 features: (1)BVCEO: 18 V; (2)BVCBS: 36 V; (3)BVEBO: 4.0 V; (4)ICBO: 2.0 mA; (5)hFE: 5.0V; (6)COB: 105 to 130 pF; (7)GPE: 9 to 10 dB.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF238 |
Other |
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Data Sheet |
Negotiable |
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MRF20030 |
Other |
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Negotiable |
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MRF20030R |
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MRF20060 |
Other |
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Data Sheet |
Negotiable |
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MRF20060_1248487 |
Other |
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Data Sheet |
Negotiable |
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MRF20060R |
Other |
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Data Sheet |
Negotiable |
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MRF20060RS |
Other |
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Data Sheet |
Negotiable |
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