Product Summary

The MRF412 is an NPN silicon rf power transistor. It is designed for applications as a high-power amplifier from 2.0 to 30MHz, in single sideband mobile, marine and base station equipment where superior ruggedness is required.

Parametrics

MRF412 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 20 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 250 Watts, Derate above 25℃: 1.43 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.

Features

MRF412 features: (1)Specified 13.6 Volts, 30MHz characteristics: output power=70 Watts PEP or CW, Minimum gain=13 dB, Efficiency=40%, Intermodulation distortion d3=-33dB typ; (2)Guaranteed ruggedness @ 3.0 dB overdrive and 15.5 V supply.

Diagrams

MRF412 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF412
MRF412
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF403
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Data Sheet
0-1: $6.60
1-10: $6.00
10-25: $5.85
25-50: $5.40
50-100: $5.10
100-250: $4.65
250-500: $4.35
500-1000: $3.99
1000-5000: $3.90
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Rotary Switches LO PROF SHFT 2-3 POS
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0-1: $6.86
1-25: $5.97
25-50: $5.86
50-100: $5.50
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Data Sheet
Negotiable 
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MRF412
Other

Data Sheet
Negotiable 
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Data Sheet
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M/A-COM Technology Solutions
Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB
Data Sheet
0-1: $46.18
1-10: $44.64
10-25: $43.10
25-50: $41.56