Product Summary

The mrf458a is an NPN silicon rf power transistor. It is designed for power amplifier applications industrial, commercial and amateur radio equipment to 30MHz.

Parametrics

mrf458a absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 20 Vdc; (2)Collector–Base Voltage VCBO: 40 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 7.5 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 115 Watts, Derate above 25℃: 0.66 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.

Features

mrf458a features: (1)Specified 12.5 Volts, 30MHz characteristics: output power=50 Watts, Minimum gain=11 dB, Efficiency=50%.

Diagrams