(Hong Kong)
Product Summary
The mrf501 is a RF power field effect transistor. The mrf501 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt portable FM equipment.
Parametrics
mrf501 absolute maximum ratings: (1)Drain–Source Voltage, VDSS: 25 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 Meg Ohm), VDGR: 25 Vdc; (3)Gate–Source Voltage, VGS: ±20 Vdc; (4)Drain Current — Continuous, ID: 4.5 Adc; (5)Total Device Dissipation,PD: 25Watts @ TC = 25°C; 0.14W/°C Derate above 25°C; (6)Storage Temperature Range, Tstg: –65 to +150 °C; (7)Operating Junction Temperature, TJ: 200 °C.
Features
mrf501 features: (1)Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 7.0 Watts Power Gain = 10 dB Min Efficiency = 50% Min; (2)Characterized with Series Equivalent Large–Signal Impedance Parameters; (3)S–Parameter Characterization at High Bias Levels; (4)Excellent Thermal Stability; (5)All Gold Metal for Ultra Reliability; (6)Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive; (7)True Surface Mount Package; (8)Available in Tape and Reel by Adding R1 Suffix to Part Number. R1 Suffix = 500 Units per 16 mm, 7 inch Reel.
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