Product Summary

The mrf525 is a high-frequency transistor. Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times.

Parametrics

mrf525 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: –10 Vdc; (2)Collector–Base Voltage VCBO: –20 Vdc; (3)Emitter–Base Voltage VEBO: –2.5 Vdc; (4)Power Dissipation,TC = 75°C, Derate linearly above TC = 75°C @All PD(max) 0.333W; 4.44mW/°C; (5)Collector Current — Continuous, IC: –70 mA; (6)Maximum Junction Temperature, TJmax: 150 °C; (7)Storage Temperature,All Tstg: –55 to +150 °C.

Features

mrf525 features: (1)High Current Gain–Bandwidth Product; (2)Low Noise Figure; (3)High Power Gain — Gpe(matched) = 11 dB (Typ); (4)Guaranteed RF Parameters; (5)Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance; (6)Lower Package Parasitics; (7)Higher Gain; (8)Available in tape and reel packaging options: T1 suffix = 3,000 units per reel.

Diagrams

mrf525 block diagram

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(USD)		 Quantity
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Data Sheet
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Data Sheet
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