Product Summary

The mrf5812r1 is a RF & microwave discrete low power transistor. Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Parametrics

mrf5812r1 absolute maximum ratings: (1)VCEO Collector-Emitter Voltage 15 Vdc; (2)VCBO Collector-Base Voltage 30 Vdc; (3)VEBO Emitter-Base Voltage 2.5 Vdc; (4)IC Collector Current 200 mA.

Features

mrf5812r1 features: (1)Low Noise - 2.5 dB @ 500 MHZ; (2)Associated Gain = 15.5 dB @ 500 MHz; (3)Ftau - 5.0 GHz @ 10v, 75mA; (4)Cost Effective SO-8 package.

Diagrams

mrf5812r1 block diagram