(Hong Kong)
Product Summary
The mrf5s21130 is a RF Power Field Effect Transistor. The mrf5s211303 is designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used i n Class AB for PCN–PCS/cel lular radio and WLL applications.
Parametrics
mrf5s21130 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: –0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25°C PD: 315 Watts; (4)Storage Temperature Range Tstg: –65 to +150 °C; (5)Operating Junction Temperature TJ: 200 °C; (6)CW Operation CW: 92 Watts.
Features
mrf5s21130 features: (1)Internally Matched, Controlled Q, for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large–Signal Impedance Parameters; (8)Qualified Up to a Maximum of 32 VDD Operation; (9)Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF5S21130HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880 |
Data Sheet |
Negotiable |
|
||||
|
MRF5S21130HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880 |
Data Sheet |
Negotiable |
|
||||
|
MRF5S21130HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880 |
Data Sheet |
Negotiable |
|
||||
|
MRF5S21130HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 LDMOS WCDMA NI880 |
Data Sheet |
Negotiable |
|
||||
