MRF652

N–Channel Enhancement–Mode Lateral MOSFET, 65 Vdc, 159W, NI-600

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Price:: US $14.48~14.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	14.50 / Piece
101 ~ 1000 :	14.49 / Piece
1001 ~ 2000 :	14.48 / Piece

PartNumber:: MRF652

Brand:: Motorola, Inc - Motorola | Pack: SMD | D/C: 04+

Availability:: Supply Ability: 2000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-23

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Part Number:MRF652
US $14.48 - 14.50
Quantity:

piece

Product Summary

The mrf652 is an N–Channel Enhancement–Mode Lateral MOSFET. Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.

Parametrics

mrf652 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: ±20 Vdc; (3)Drain Current — Continuous ID: 7 Adc; (4)Total Device Dissipation PD: 159W @ TC ≥ 25°C; 0.9W/°C; (5)Derate above 25°C; (6)Storage Temperature Range Tstg: –65 to +150 °C; (7)Operating Junction Temperature TJ: 200 °C.

Features

mrf652 features: (1)Specified Performance @ Full GSM Band, 921–960 MHz, 26 Volts; (2)Output Power, P1dB — 80 Watts (Typ); (3)Power Gain @ P1dB — 16 dB (Typ); (4)Efficiency @ P1dB — 58% (Typ); (5)Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.