MRF6S19060NBR1

RF Power Field Effect Transistor, Integrated ESD Protection, TO, RoHS Compliant, -0.5V

Rated 5 Rating 5 | reviews | Write a review

Price:: US $7.48~7.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	7.50 / Piece
101 ~ 1000 :	7.49 / Piece
1001 ~ 2000 :	7.48 / Piece

PartNumber:: MRF6S19060NBR1

Brand:: HONGKONG PEAKO TECHNOLOGY CO., LTD, - FSL | Pack: SMD | D/C: 06+

Availability:: Supply Ability: 2000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-22

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Part Number:MRF6S19060NBR1
US $7.48 - 7.50
Quantity:

piece

Product Summary

The mrf6s19060nbr1 is a RF Power Field Effect Transistor. It is esigned for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. The mrf6s19060nbr1 is suitable for TDMA, CDMA and multicarrier amplifier applications. It is used in Class AB for PCN-PCS/cellular radio and WLL applications.

Parametrics

mrf6s19060nbr1 absolute maximum ratings: (1)Drain-Source Voltage:-0.5V to +68V; (2)Gate-Source Voltage:-0.5V to +12V; (3)Storage Temperature Range:-65℃ to +150℃; (4)Case Operating Temperature:150℃; (5)Operating Junction Temperature:225℃.

Features

mrf6s19060nbr1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Optimized for Doherty Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.