(Hong Kong)
Product Summary
The mrf6s23140 is an N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.
Parametrics
mrf6s23140 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: -65 to +150 °C; (4)Case Operating Temperature TC: 150 °C; (5)Operating Junction Temperature TJ: 225 °C.
Features
mrf6s23140 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF6S23140HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2.3GHZ 28W |
Data Sheet |
Negotiable |
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MRF6S23140HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2.3GHZ 28W |
Data Sheet |
Negotiable |
|
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|
MRF6S23140HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2.3GHZ 28W |
Data Sheet |
Negotiable |
|
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|
MRF6S23140HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2.3GHZ 28W |
Data Sheet |
Negotiable |
|
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