Product Summary

The mrf6s9130hr3 is the RF power field effect transistor which is designed N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. And it is uitable for multicarrier amplifier applications.

Parametrics

mrf6s9130hr3 absolute maximum ratings: (1)Drain-Source Voltage: -0.5, +68 Vdc; (2)Gate-Source Voltage: -0.5, +12 Vdc; (3)Total Device Dissipation @ TC = 25℃: 389 W; (4)Derate above 25℃: 2.2 W/℃; (5)Storage Temperature Range: - 65 to +150℃; (6)Case Operating Temperature: 150 ℃; (7)Operating Junction Temperature: 200℃.

Features

mrf6s9130hr3 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Low Gold Plating Thickness on Leads, 40μ Nominal.; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

mrf6s9130hr3 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF6S9130HR3
MRF6S9130HR3


MOSFET RF N-CHAN 28V 27W NI-780

Data Sheet

0-250: $40.24
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF650
MRF650

TriQuint Semiconductor

RF Amplifier RF Bipolar Trans

Data Sheet

Negotiable 
MRF652
MRF652

TriQuint Semiconductor

RF Amplifier RF Bipolar Trans

Data Sheet

Negotiable 
MRF652-A
MRF652-A

TriQuint Semiconductor

RF Amplifier RF Bipolar Trans

Data Sheet

Negotiable 
MRF6S18060NBR1
MRF6S18060NBR1

Freescale Semiconductor

Transistors RF MOSFET Power 1880MHZ 60W

Data Sheet

Negotiable 
MRF6P18190HR5
MRF6P18190HR5

Freescale Semiconductor

Transistors RF MOSFET Power HV6 1.8GHZ 44W

Data Sheet

Negotiable 
MRF6S18140HR
MRF6S18140HR

Other


Data Sheet

Negotiable