(Hong Kong)
Product Summary
The mrf6s9200hs is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
mrf6s9200hs absolute maximum ratings: (1)Drain-Source Voltage VDSS: - 0.5, +68 Vdc; (2)Gate-Source Voltage VGS: - 0.5, +12 Vdc; (3)Total Device Dissipation PD: 175W; @ TC = 25°C; 1.0W/°C Derate above 25°C; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Operating Junction Temperature TJ: 200 °C.
Features
mrf6s9200hs features: (1)Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF; (2)Power Gain - 22.7 dB; (3)Drain Efficiency - 32% ; (4)ACPR @ 750 kHz Offset -- -47 dBc @ 30 kHz Bandwidth.
Diagrams
