(Hong Kong)
Product Summary
The mrf7p20040hs is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications with frequencies from 2010 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Parametrics
mrf7p20040hs absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 °C; (5)Case Operating Temperature TC: 150 °C; (6)Operating Junction Temperature TJ: 225 °C.
Features
mrf7p20040hs features: (1)Production Tested in a Symmetrical Doherty Configuration; (2)100% PAR Tested for Guaranteed Output Power Capability; (3)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters; (4)Internally Matched for Ease of Use; (5)Integrated ESD Protection; (6)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 MRF7P20040HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 2GHZ 40W NI780HS-4 |
Data Sheet |
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MRF7P20040HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 2GHZ 40W NI780HS-4 |
Data Sheet |
Negotiable |
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