(Hong Kong)
Product Summary
The mrf7s19080h is an N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications.
Parametrics
mrf7s19080h absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150°C; (5)Case Operating Temperature TC: 150 °C; (6)Operating Junction Temperature TJ: 225°C.
Features
mrf7s19080h features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class COperation; (6)Designed for Digital Predistortion Error Correction Systems; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF7S19080HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 1.9GHZ 28V |
Data Sheet |
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MRF7S19080HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 1.9GHZ 28V |
Data Sheet |
Negotiable |
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MRF7S19080HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 1.9GHZ 28V |
Data Sheet |
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MRF7S19080HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 1.9GHZ 28V |
Data Sheet |
Negotiable |
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