(Hong Kong)
Product Summary
The mrf838a is an NPN silicon RF power transisitor designed designed for Class A, B and C Amplifier Applications up to 1.0 GHz.
Parametrics
mrf838a absolute maximum ratings: (1)IC: 600 mA; (2)VCBO: 36 V; (3)PDISS: 8.75 W @ TC = 25 °C; (4)TJ: -65 °C to +200 °C; (5)TSTG: -65 °C to +200 °C; (6)θθθθJC: 20 °C/W.
Features
mrf838a features: (1)Gold Metallization; (2)Emitter Ballasting; (3)High Gain.
Diagrams
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 MRF838A |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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MRF837 |
Other |
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Data Sheet |
Negotiable |
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MRF8372LF |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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MRF8372LFR1 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF8372LFR2 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF838A |
Other |
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Data Sheet |
Negotiable |
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MRF839F |
Other |
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Data Sheet |
Negotiable |
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