Product Summary

The MRF9060LR5 is a RF Power field effect transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the device makes the MRF9060LR5 ideal for large- signal, common-source amplifier applications in 26 volt base station equipment.

Parametrics

MRF9060LR5 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: - 0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: - 0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25℃, PD: 159W; (4)Total Device Dissipation Derate above 25℃: 0.91 W/℃(MRF9060LR1); (5)Total Device Dissipation @ TC = 25℃, PD: 219W(MRF9060LSR1); (6)Total Device Dissipation Derate above 25℃: 1.25 W/℃(MRF9060LSR1); (7)Storage Temperature Range, Tstg: - 65 to +150 ℃; (8)Case Operating Temperature, TC: 150 ℃; (9)Operating Junction Temperature, TJ: 200 ℃.

Features

MRF9060LR5 features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Low Gold Plating Thickness on LeadsL Suffix Indicates 40u Nominal; (6)RoHS Compliant; (7)In Tape and ReelR1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Diagrams

MRF9060LR5 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF9060LR5
MRF9060LR5
Freescale Semiconductor
Transistors RF MOSFET Power 60W 1GHZ RFPWR FET NI360
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF9002NR2
MRF9002NR2
Freescale Semiconductor
Transistors RF MOSFET Power FR PWR FET ARRAY PFP-16N
Data Sheet
Negotiable 
MRF9002R2
MRF9002R2
Other

Data Sheet
Negotiable 
MRF9002RS
MRF9002RS
Other

Data Sheet
Negotiable 
MRF9011LT1
MRF9011LT1
Other

Data Sheet
Negotiable 
MRF9030
MRF9030
Other

Data Sheet
Negotiable 
MRF9030GNR1
MRF9030GNR1
Freescale Semiconductor
Transistors RF MOSFET Power 30W RF PWR FET
Data Sheet
Negotiable