(Hong Kong)
Product Summary
The mrfe6s9135hr3 is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
Parametrics
mrfe6s9135hr3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +66 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: - 65 to +150 °C; (4)Case Operating Temperature TC: 150 °C; (5)Operating Junction Temperature TJ: 200 °C.
Features
mrfe6s9135hr3 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)RoHS Compliant; (6)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRFE6S9135HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 135W NI880 |
Data Sheet |
Negotiable |
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Pricing (USD) |
Quantity | ||||||||
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Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
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MRFE6P3300HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
Negotiable |
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Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |
Data Sheet |
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MRFE6P9220HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |
Data Sheet |
Negotiable |
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MRFE6S8046GNR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 45W GSM |
Data Sheet |
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MRFE6S8046NR1 |
Freescale Semiconductor |
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Data Sheet |
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