IDH08SG60C

SiC Schottky Diode, IDH08SG60C, TO-220, 600V, 12nC, 8A

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Price:: US $1.60~2.08 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 2 :	2.08 / Piece
2 ~ 360 :	1.60 / Piece

PartNumber:: IDH08SG60C

Brand:: Infineon Technologies AG - Infineon | D/C: 11+

Availability:: Supply Ability: 1/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-14

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Part Number:IDH08SG60C
US $1.60 - 2.08
Quantity:

piece

Product Summary

The IDH08SG60C is a SiC Schottky Diode.

Parametrics

IDH08SG60C absolute maximum ratings: (1)Continuous forward current: 8 A; (2)Non-repetitive peak forward current: 350A; (3)Repetitive peak reverse voltage: 600 V; (4)Diode dv/dt ruggedness dv/dt: 50 V/ns; (5)Power dissipation Ptot: 100 W; (6)Operating and storage temperature: -55 to 175 °C.

Features

IDH08SG60C features: (1)Revolutionary semiconductor material - Silicon Carbide; (2)Switching behavior benchmark; (3)No reverse recovery / No forward recovery; (4)Temperature independent switching behavior; (5)High surge current capability; (6)Pb-free lead plating; RoHS compliant; (7)Qualified according to JEDEC for target applications.