Product Summary
The IRLZ14 is a Power MOSFET. It provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Parametrics
IRLZ14 absolute maximum ratings: (1)Drain-Source Voltage: 60V; (2)Gate-Source Voltage VGS: ± 10 V; (3)Pulsed Drain Current a IDM: 10 A; (4)Linear Derating Factor: 0.29 W/°C; (5)Single Pulse Avalanche Energy b EAS: 39.5 mJ; (6)Maximum Power Dissipation TC = 25 °C PD: 43 W; (7)Peak Diode Recovery dV/dt c dV/dt: 4.5 V/ns; (8)Operating Junction and Storage Temperature Range TJ, Tstg: - 55°C to + 175 °C; (9)Soldering Recommendations (Peak Temperature)d for 10 s: 300 °C.
Features
IRLZ14 features: (1)Dynamic dV/dt Rating; (2)Logic-Level Gate Drive; (3)RDS(on)Specified at VGS = 4 V and 5 V; (4)175 °C Operating Temperature; (5)Fast Switching; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Compliant to RoHS Directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRLZ14 |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRLZ14, SiHLZ14 |
Other |
Data Sheet |
Negotiable |
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IRLZ14PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRLZ14S |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
Negotiable |
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IRLZ14L |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
Negotiable |
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IRLZ144NPbF |
Other |
Data Sheet |
Negotiable |
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IRLZ14SPBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRLZ14STRRPBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
Negotiable |
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