(Hong Kong)
Product Summary
The fll120 is a L-Band Medium & High Power GaAs FET. The fll120 is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
Parametrics
fll120 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, PT: 37.5℃; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.
Features
fll120 features: (1)High Output Power: P1dB = 40.0dBm (Typ.); (2)High Gain: G1dB = 10.0dB (Typ.); (3)High PAE: ηadd = 40% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FLL1200IU-2 |
Other |
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Data Sheet |
Negotiable |
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FLL1200IU-3 |
Other |
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Data Sheet |
Negotiable |
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