(Hong Kong)
Product Summary
The flm1011-3f is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Parametrics
flm1011-3f absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 25.0 W; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
flm1011-3f features: (1)High Output Power: P1dB=35.0dBm(Typ.); (2)High Gain: G1dB=7.5dB(Typ.); (3)High PAE: ηadd=29%(Typ.); (4)Broad Band: 10.7～11.7GHz; (5)Impedance Matched Zin/Zout = 50Ω; (6)Hermetically Sealed Package.
Diagrams
