IXFN100N20

Avalanche Rated Fast Intrinsic Diode, 500 V, ixfn100n20, 50A, TO

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Price:: US $1.64~1.66 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	1.66 / Piece
101 ~ 200 :	1.65 / Piece
201 ~ 300 :	1.64 / Piece

PartNumber:: IXFN100N20

Brand:: IXYS Corporation - ixys | D/C: 06+

Availability:: Supply Ability: 2000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-22

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Part Number:IXFN100N20
US $1.64 - 1.66
Quantity:

piece

Product Summary

The ixfn100n20 is an N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode.

Parametrics

ixfn100n20 absolute maximum ratings: (1)VDSS: 200 V when TJ= 25 to 150℃; (2)VDGR: 200 V when TJ= 25 to 150℃; RGS = 1 MΩ; (3)VGSS: ±20 V when Continuous; (4)VGSM: ±30 V when Transient; (5)ID25: 100A when TC = 25℃; (6)IDRMS: 50 A when External lead current limit; (7)IDM: 400 A when TC = 25℃, pulse width limited by TJM; (8)IAR: 5: 0 A when TC = 25℃; (9)EAR: 30 mJ when TC = 25℃; (10)dv/dt: 5V/ns when IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150℃, RG = 2Ω; (11)PD: 520W when TC = 25℃; (12)TJ: -55 to +150℃; (14)TJM: 150℃; (15)Tstg: -55 to +150℃.

Features

ixfn100n20 features: (1)International standard packages; (2)JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification; (3)miniBLOC with Aluminium nitride isolation; (4)Low RDS (on)HDMOSTM process; (5)Rugged polysilicon gate cell structure; (6)Unclamped Inductive Switching (UIS)rated; (7)Low package inductance; (8)Fast intrinsic Rectifier.