Product Summary

The mrf429 is an NPN silicon rf power transistor. It is designed for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

Parametrics

mrf429 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 50 Vdc; (2)Collector–Base Voltage VCBO: 100 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current Continuous IC: 16 Adc; (5)Withstand Current 10 s: 20 Adc; (6)Total Device Dissipation @ TC = 25℃ PD: 233Watts; Derate above 25℃: 1.33W/℃; (7)Storage Temperature Range Tstg: –65 to +150 ℃.

Features

mrf429 features: (1)Specified 50 Volt, 30 MHz Characteristics, Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45%; (2)Intermodulation Distortion @ 150 W (PEP), IMD = -32 dB (Max); (3)Diffused Emitter Resistors for Superior Ruggedness; (4)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW.

Diagrams

mrf429 diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF429
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