Product Summary

The mrf555 is an NPN silicon RF low power transistor. It is designed primarily for wideband large signal predriver stages in the UHF frequency range.

Parametrics

mrf555 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 16 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current - Continuous IC: 400 mAdc; (5)Operating Junction Temperature TJ: 150 °C; (6)Total Device Dissipation @ TC = 75°C: 40W, Derate above 75°C: 4.0mW/°C; (7)Storage Temperature Range Tstg: –55 to +150 °C.

Features

mrf555 features: (1)Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ), Efficiency 60% (Typ); (2)Cost Effective PowerMacro Package; (3)Electroless Tin Plated Leads for Improved Solderability; (4)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Diagrams

mrf555 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF555
MRF555
Advanced Semiconductor, Inc.
Transistors RF Bipolar Small Signal RF Transistor
Data Sheet
0-1: $1.62
1-10: $1.35
10-25: $1.22
25-50: $1.08
MRF555T
MRF555T
Advanced Semiconductor, Inc.
Transistors RF Bipolar Small Signal RF Transistor
Data Sheet
0-1: $1.62
1-10: $1.35
10-25: $1.22
25-50: $1.08