(Hong Kong)
Product Summary
The tim6472-30sl is a microwave power GaAs FET.
Parametrics
tim6472-30sl absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3)Drain Current IDS: 22A; (4)Total Power Dissipation (Tc= 25 °C)PT: 115 W; (5)Channel Temperature Tch: 175°C; (6)Storage Temperature Tstg: -65 to +175°C.
Features
tim6472-30sl features: (1)low intermodulation distortion: IM3=-45 dBc at Pout= 34.5dBm, single carrier level; (2)high gain: G1dB=7.0dB at 6.4GHz to 7.2GHz; (3)broadband internallymatched; (4)high power: P1dB=45dBm at 6.4GHz to 7.2GHz; (5)hermetically sealed package.
Diagrams
